Invention Grant
- Patent Title: Chemical detection with MOSFET sensor
- Patent Title (中): 采用MOSFET传感器进行化学检测
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Application No.: US13538025Application Date: 2012-06-29
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Publication No.: US08421521B1Publication Date: 2013-04-16
- Inventor: Arjang Hassibi , Bahman Hekmatshoartabari , Ali Khakifirooz , Davood Shahrjerdi
- Applicant: Arjang Hassibi , Bahman Hekmatshoartabari , Ali Khakifirooz , Davood Shahrjerdi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
Embodiments relate to a metal-oxide-semiconductor device including a metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFET includes a gate configured to change electrical characteristics based on a sensed chemical characteristic and a source and drain. One of the source and drain is connected to an analysis circuit, and a backgate is connected to an AC voltage source.
Information query
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