Invention Grant
- Patent Title: Multi-layered circuit structure
- Patent Title (中): 多层电路结构
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Application No.: US12961959Application Date: 2010-12-07
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Publication No.: US08421575B1Publication Date: 2013-04-16
- Inventor: Gary L. Sanders
- Applicant: Gary L. Sanders
- Applicant Address: US CA Alviso
- Assignee: TiVo Inc.
- Current Assignee: TiVo Inc.
- Current Assignee Address: US CA Alviso
- Agency: Hickman Palermo Truong Becker Bingham Wong LLP
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F21/02 ; H01F27/28

Abstract:
A multi-layered structure is disclosed for implementing an inductor. A first spiral inductor is situated on a first substrate layer, and one or more additional spiral inductors are situated on one or more additional substrate layers. The substrate layers are positioned such that they are substantially in parallel with each other and the spiral inductors on the various layers are aligned with each other. The spiral inductors are electrically coupled to each other by coupling structures to enable them to act as a single overall inductor. Such an overall inductor exhibits improved characteristics, such as a higher Q factor. Other components may be incorporated with and coupled to the overall inductor; thus, this multi-layered structure may be used to construct almost any circuit in which an inductor is implemented.
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