Invention Grant
- Patent Title: Inrush current control
- Patent Title (中): 浪涌电流控制
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Application No.: US12836153Application Date: 2010-07-14
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Publication No.: US08422179B2Publication Date: 2013-04-16
- Inventor: Xiaodong (David) Zhan , Xiangxu (Alan) Yu
- Applicant: Xiaodong (David) Zhan , Xiangxu (Alan) Yu
- Applicant Address: US CA Milpitas
- Assignee: Intersil Americas Inc.
- Current Assignee: Intersil Americas Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus LLP
- Main IPC: H02H9/08
- IPC: H02H9/08

Abstract:
An inrush current control circuit selectively short-circuit bypasses an inrush current limiting resistor (R1) of a power supply that includes a switching transistor (Q1) having a control terminal (gate or base) driven in dependence on a pulse width modulated (PWM) drive signal. The inrush current control circuit includes a bypass transistor (Q3), a first resistor (R3), a capacitor (C2), a second resistor (R2) and a diode (D3), wherein an anode terminal of the diode (D3) is connected to one of the terminals of the switching transistor (Q1) of the power supply.
Public/Granted literature
- US20110019316A1 INRUSH CURRENT CONTROL Public/Granted day:2011-01-27
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