Invention Grant
- Patent Title: Overcurrent detecting apparatus
- Patent Title (中): 过电流检测装置
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Application No.: US11477618Application Date: 2006-06-30
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Publication No.: US08422183B2Publication Date: 2013-04-16
- Inventor: Shunzou Ohshima
- Applicant: Shunzou Ohshima
- Applicant Address: JP Tokyo
- Assignee: Yazaki Corporation
- Current Assignee: Yazaki Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPP2005-198731 20050707
- Main IPC: H02H3/08
- IPC: H02H3/08

Abstract:
A voltage (V1−V2) between a predetermined point P2 on a copper foil pattern 4 connected to a source of a switching FET (T1) and a drain P1 of the FET (T1) is input into an input terminal of a comparator CMP1 as an overcurrent determination voltage for comparison with a reference voltage V3. As this occurs, since there exists a voltage that is to be dropped by a resistor Rp possessed by the copper foil 4, the voltage (V1−V2) becomes larger than an inter-terminal voltage VDS of the FET (T1), and as a result, the effect imposed by an offset voltage Voff possessed by the comparator CMP1 can be reduced.
Public/Granted literature
- US20070008672A1 Overcurrent detecting apparatus Public/Granted day:2007-01-11
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