Invention Grant
US08422307B2 Nonvolatile memory device and read method using dynamically determined read voltages
有权
非易失性存储器件和使用动态确定的读取电压的读取方法
- Patent Title: Nonvolatile memory device and read method using dynamically determined read voltages
- Patent Title (中): 非易失性存储器件和使用动态确定的读取电压的读取方法
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Application No.: US12797668Application Date: 2010-06-10
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Publication No.: US08422307B2Publication Date: 2013-04-16
- Inventor: Han Woong Yoo , Seung-Hwan Song , Hee seok Eun , Jun jin Kong
- Applicant: Han Woong Yoo , Seung-Hwan Song , Hee seok Eun , Jun jin Kong
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0061741 20090707
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method of reading a nonvolatile memory device comprises measuring threshold voltage distributions of a plurality of memory cells, combining the measured threshold voltage distributions, and determining local minimum points in the combined threshold voltage distributions to determine read voltages for a predetermined group of memory cells.
Public/Granted literature
- US20110007563A1 NONVOLATILE MEMORY DEVICE, SYSTEM, AND RELATED METHODS OF OPERATION Public/Granted day:2011-01-13
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