Invention Grant
US08422309B2 Voltage generation circuit and nonvolatile memory device using the same
失效
电压产生电路和使用其的非易失性存储器件
- Patent Title: Voltage generation circuit and nonvolatile memory device using the same
- Patent Title (中): 电压产生电路和使用其的非易失性存储器件
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Application No.: US12650639Application Date: 2009-12-31
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Publication No.: US08422309B2Publication Date: 2013-04-16
- Inventor: Byung Ryul Kim , Duck Ju Kim , You Sung Kim , Se Chun Park
- Applicant: Byung Ryul Kim , Duck Ju Kim , You Sung Kim , Se Chun Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0047821 20090529
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/06
Abstract:
A voltage generation circuit comprises a voltage generation control unit configured to output one of a first voltage level determination signal having a fixed data value and a second voltage level determination signal having a varying data value in response to a selection signal, and a voltage generation unit configured to generate a voltage having a single pulse form or a voltage having a pulse form whose rising edge portion rises in incremental voltage steps in response to the voltage level determination signal outputted from the voltage generation control unit.
Public/Granted literature
- US20100302881A1 VOLTAGE GENERATION CIRCUIT AND NONVOLATILE MEMORY DEVICE USING THE SAME Public/Granted day:2010-12-02
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