Invention Grant
- Patent Title: Reduced power consumption memory circuitry
- Patent Title (中): 降低功耗记忆电路
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Application No.: US13284480Application Date: 2011-10-28
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Publication No.: US08422313B2Publication Date: 2013-04-16
- Inventor: Stefan Buettner , David A. Hrusecky , Werner Juchmes , Wolfgang Penth , Rolf Sautter
- Applicant: Stefan Buettner , David A. Hrusecky , Werner Juchmes , Wolfgang Penth , Rolf Sautter
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: DeLizio Gilliam, PLLC
- Priority: EP10195298 20101216
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/00

Abstract:
In a circuit that reduces power consumption in an array system of memory cells accessible in parallel, a local evaluation circuit is connected to a memory cell and a global bit line of the array system of memory cells. A selection circuitry splits the global bit line into an upper part and a lower part of the global bit line. The selection circuitry is adapted to receive an early set prediction signal and to connect the upper part of the global bit line to the lower part of the global bit line based on the early set prediction signal. The early set prediction signal indicates whether a set of memory cells, which include the memory cell, is being read. The circuit also includes a N:1 multiplexer connected to the lower part of the global bit line to receive the lower part of the global bit line as input.
Public/Granted literature
- US20120155188A1 REDUCED POWER CONSUMPTION MEMORY CIRCUITRY Public/Granted day:2012-06-21
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