Invention Grant
- Patent Title: Multi-bit test circuit of semiconductor memory apparatus
- Patent Title (中): 半导体存储器件的多位测试电路
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Application No.: US12966650Application Date: 2010-12-13
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Publication No.: US08422323B2Publication Date: 2013-04-16
- Inventor: Sun Suk Yang
- Applicant: Sun Suk Yang
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2010-0074022 20100730
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C7/00 ; G11C8/00
Abstract:
A multi-bit test circuit for a semiconductor memory is configured to cause an active command to activate active signals. At least two active signals are respectively inputted to a plurality of banks at different timings in a multi-bit test mode.
Public/Granted literature
- US20120026809A1 MULTI-BIT TEST CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2012-02-02
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