Invention Grant
US08422327B2 Semiconductor device having nonvolatile memory element and manufacturing method thereof
有权
具有非易失性存储元件的半导体器件及其制造方法
- Patent Title: Semiconductor device having nonvolatile memory element and manufacturing method thereof
- Patent Title (中): 具有非易失性存储元件的半导体器件及其制造方法
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Application No.: US12801124Application Date: 2010-05-24
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Publication No.: US08422327B2Publication Date: 2013-04-16
- Inventor: Kazuhiro Teramoto , Hiroki Fujisawa , Susumu Takahashi
- Applicant: Kazuhiro Teramoto , Hiroki Fujisawa , Susumu Takahashi
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-131174 20090529
- Main IPC: G11C17/18
- IPC: G11C17/18
Abstract:
To provide a semiconductor device including a pair of antifuse elements at either a high level or a low level, an OR circuit that outputs different logic information for a case that at least one of the antifuse elements is at a high level and a case that both of the antifuse elements are at a low level, and an exclusive OR circuit that outputs different logic information for a case that the logic states are different from each other and a case that they are same as each other.
Public/Granted literature
- US20100302833A1 Semiconductor device having nonvolatile memory element and manufacturing method thereof Public/Granted day:2010-12-02
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