Invention Grant
- Patent Title: Semiconductor device with anti-fuse elements
- Patent Title (中): 具有抗熔丝元件的半导体器件
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Application No.: US13086777Application Date: 2011-04-14
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Publication No.: US08422329B2Publication Date: 2013-04-16
- Inventor: Yoshiro Riho
- Applicant: Yoshiro Riho
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-101085 20100426
- Main IPC: G11C17/18
- IPC: G11C17/18
Abstract:
A semiconductor device compares potential AF_G at an end of an anti-fuse element with potential VPPR. If potential AF_G is equal to or higher than potential VPPR, then the semiconductor device boosts potential VPPSVT of a power supply line that is connected to the end of the anti-fuse element. If the of the anti-fuse element and the other end thereof are connected to each other by the boosted potential, thereby making potential AF_G lower than potential VPPR, then the semiconductor device stops boosting potential VPPSVT.
Public/Granted literature
- US20110261630A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-10-27
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