Invention Grant
- Patent Title: Semiconductor laser device
- Patent Title (中): 半导体激光器件
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Application No.: US12485680Application Date: 2009-06-16
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Publication No.: US08422522B2Publication Date: 2013-04-16
- Inventor: Nobuhiro Ohkubo
- Applicant: Nobuhiro Ohkubo
- Applicant Address: JP Osaka-shi
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka-shi
- Agency: Morrison & Foerster LLP
- Priority: JP2008-157782 20080617
- Main IPC: H01S3/04
- IPC: H01S3/04

Abstract:
In a semiconductor laser device, a first lead has a mounting portion for mounting a semiconductor laser element on its top surface via a submount member, and a lead portion extending from the mounting portion. Given that a direction in which a primary beam is emitted from the laser element is defined as a forward direction, and that a direction vertical to the forward direction and parallel to the top surface of the mounting portion is defined as a lateral direction, the first lead has, in one region of a side face of the mounting portion, a lateral reference surface which is parallel to a side face of the semiconductor laser element and flat. In the one region of the side face of the mounting portion, a recess portion is formed adjacent to the lateral reference surface.
Public/Granted literature
- US20090310638A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2009-12-17
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