Invention Grant
US08422525B1 Optical device structure using miscut GaN substrates for laser applications
有权
使用miscut GaN衬底进行激光应用的光学器件结构
- Patent Title: Optical device structure using miscut GaN substrates for laser applications
- Patent Title (中): 使用miscut GaN衬底进行激光应用的光学器件结构
-
Application No.: US12749466Application Date: 2010-03-29
-
Publication No.: US08422525B1Publication Date: 2013-04-16
- Inventor: James W. Raring , Daniel F. Feezell , Nicholas J. Pfister
- Applicant: James W. Raring , Daniel F. Feezell , Nicholas J. Pfister
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
An optical device capable of emitting light having a wavelength ranging from about 490 to about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface region characterized by an orientation of greater than 3 degrees from (11-22) towards (0001) but less than about 50 degrees. A laser stripe formed on the substrate has a cavity orientation substantially parallel to the m-direction.
Information query
