Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12919546Application Date: 2009-02-26
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Publication No.: US08422837B2Publication Date: 2013-04-16
- Inventor: Kenichi Nishi , Junichi Fujikata , Jun Ushida , Daisuke Okamoto
- Applicant: Kenichi Nishi , Junichi Fujikata , Jun Ushida , Daisuke Okamoto
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2008-047736 20080228
- International Application: PCT/JP2009/053591 WO 20090226
- International Announcement: WO2009/107742 WO 20090903
- Main IPC: H01L33/62
- IPC: H01L33/62

Abstract:
A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.
Public/Granted literature
- US20100320496A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-12-23
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