Invention Grant
- Patent Title: Temperature detection method of semiconductor device and power conversion apparatus
- Patent Title (中): 半导体器件和功率转换装置的温度检测方法
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Application No.: US11036012Application Date: 2005-01-18
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Publication No.: US08423317B2Publication Date: 2013-04-16
- Inventor: Tomoya Kamezawa , Naoki Takata , Masayuki Hirota , Masahiro Hiraga , Satoshi Ibori
- Applicant: Tomoya Kamezawa , Naoki Takata , Masayuki Hirota , Masahiro Hiraga , Satoshi Ibori
- Applicant Address: JP Chiba
- Assignee: Hitachi Industrial Equipment Systems Co., Ltd.
- Current Assignee: Hitachi Industrial Equipment Systems Co., Ltd.
- Current Assignee Address: JP Chiba
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2004-062568 20040305; JP2004-222738 20040730
- Main IPC: G01K11/00
- IPC: G01K11/00

Abstract:
A temperature detection method for a semiconductor device and a power conversion apparatus are disclosed. A temperature detection device is used to detect the temperature for thermal protection of a power semiconductor device. The temperature detection device is placed in the proximity of a component having the power semiconductor device packaged therein, and either an emitter terminal or a collector terminal of the power semiconductor device. Since the temperature detection device is mounted on a circuit board, it does not require insulation from a cooling fin on which the power semiconductor device is mounted and lead wires can be eliminated.
Public/Granted literature
- US20050197799A1 Temperature detection method of semiconductor device and power conversion apparatus Public/Granted day:2005-09-08
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