Invention Grant
US08423866B2 Non-volatile memory and method with post-write read and adaptive re-write to manage errors
有权
非易失性存储器和具有后写入读取和自适应重写的方法来管理错误
- Patent Title: Non-volatile memory and method with post-write read and adaptive re-write to manage errors
- Patent Title (中): 非易失性存储器和具有后写入读取和自适应重写的方法来管理错误
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Application No.: US12642728Application Date: 2009-12-18
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Publication No.: US08423866B2Publication Date: 2013-04-16
- Inventor: Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
- Applicant: Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies, Inc.
- Current Assignee: SanDisk Technologies, Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. The memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. Input data is written and staged in the first portion before being copied to the second portion. An error management provides checking the quality of the copied data for excessive error bits. The copying and checking are repeated on a different location in the second portion until either a predetermined quality is satisfied or the number or repeats exceeds a predetermined limit. The error management is not started when a memory is new with little or no errors, but started after the memory has aged to a predetermined amount as determined by the number of erase/program cycling its has experienced.
Public/Granted literature
- US20110099460A1 Non-Volatile Memory And Method With Post-Write Read And Adaptive Re-Write To Manage Errors Public/Granted day:2011-04-28
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