Invention Grant
US08423926B2 Acceptance determining method of blank for EUV mask and manufacturing method of EUV mask
有权
EUV掩模的掩模验证方法和EUV掩模的制造方法
- Patent Title: Acceptance determining method of blank for EUV mask and manufacturing method of EUV mask
- Patent Title (中): EUV掩模的掩模验证方法和EUV掩模的制造方法
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Application No.: US13237790Application Date: 2011-09-20
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Publication No.: US08423926B2Publication Date: 2013-04-16
- Inventor: Takeshi Koshiba , Hidefumi Mukai , Seiro Miyoshi , Kazunori Iida
- Applicant: Takeshi Koshiba , Hidefumi Mukai , Seiro Miyoshi , Kazunori Iida
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2011-000100 20110104
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
According to one embodiment, an acceptance determining method of a blank for an EUV mask includes evaluating whether or not an integrated circuit device becomes defective, on the basis of information of a defect contained in a blank for an EUV mask and design information of a mask pattern to be formed on the blank. The integrated circuit device is to be manufactured by using the EUV mask. The EUV mask is manufactured by forming the mask pattern on the blank. And the blank is determined to be non-defective in a case that the integrated circuit device is not to be defective.
Public/Granted literature
- US20120174045A1 ACCEPTANCE DETERMINING METHOD OF BLANK FOR EUV MASK AND MANUFACTURING METHOD OF EUV MASK Public/Granted day:2012-07-05
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