Invention Grant
US08426087B2 Photomask, manufacturing apparatus and method of semiconductor device using the same, and photomask feature layout method
有权
光掩模，使用其的半导体器件的制造装置和方法以及光掩模特征布局方法
- Patent Title: Photomask, manufacturing apparatus and method of semiconductor device using the same, and photomask feature layout method
- Patent Title (中): 光掩模，使用其的半导体器件的制造装置和方法以及光掩模特征布局方法
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Application No.: US13187955Application Date: 2011-07-21
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Publication No.: US08426087B2Publication Date: 2013-04-23
- Inventor: Ayumi Minamide , Mitsuru Okuno , Akemi Moniwa , Manabu Ishibashi
- Applicant: Ayumi Minamide , Mitsuru Okuno , Akemi Moniwa , Manabu Ishibashi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-195932 20100901
- Main IPC: G03F1/38
- IPC: G03F1/38
Abstract:
A photomask is provided which can have a large depth of focus even if four main features are annularly arranged at random.The photomask has four annularly arranged main features based on design information of a circuit feature to be formed on a wafer, and a sub-feature is laid at an intersection point of two diagonal lines of a quadrangle formed by four vertices inside the four main features in order to increase a depth of focus of an exposure feature. Therefore, the depth of focus can be increased even if the main features are not arranged at a constant pitch.
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