Invention Grant
US08426114B2 L-shaped feature, method of making an L-shaped feature and method of making an L-shaped structure
有权
L形特征，制作L形特征的方法和制作L形结构的方法
- Patent Title: L-shaped feature, method of making an L-shaped feature and method of making an L-shaped structure
- Patent Title (中): L形特征，制作L形特征的方法和制作L形结构的方法
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Application No.: US13016841Application Date: 2011-01-28
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Publication No.: US08426114B2Publication Date: 2013-04-23
- Inventor: Henning Haffner , Martin Ostermayr
- Applicant: Henning Haffner , Martin Ostermayr
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G03F7/00
- IPC: G03F7/00
Abstract:
In accordance with an embodiment of the present invention, a method for making a semiconductor device comprises forming a photo sensitive layer on a semiconductive substrate, and forming an L-shaped structure in the photo sensitive layer by exposing the photo sensitive layer to light via a reticle, wherein the reticle comprises an L-shapes feature having a first non-orthogonal edge at an intersection of two legs of the L-shaped feature.
Public/Granted literature
- US20120196209A1 L-shaped Feature, Method of Making an L-shaped Feature and Method of Making an L-shaped Structure Public/Granted day:2012-08-02
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