Invention Grant
- Patent Title: Potted integrated circuit device with aluminum case
- Patent Title (中): 盆式集成电路器件带铝外壳
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Application No.: US13493196Application Date: 2012-06-11
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Publication No.: US08426253B2Publication Date: 2013-04-23
- Inventor: Peter Chou , Lucy Tian , Ivan Fu , Samuel Li , May-Luen Chou
- Applicant: Peter Chou , Lucy Tian , Ivan Fu , Samuel Li , May-Luen Chou
- Applicant Address: US NY Hauppauge
- Assignee: Vishay General Semiconductor LLC
- Current Assignee: Vishay General Semiconductor LLC
- Current Assignee Address: US NY Hauppauge
- Agency: Mayer & Williams PC
- Main IPC: H01L21/60
- IPC: H01L21/60

Abstract:
An integrated circuit device includes a die, a lead, and an electrically-conductive structure that is arranged to facilitate electrical communication between the die and the lead. The device also includes a potting material, in which the electrically conductive structure, the die, and at least part of the lead are embedded. An electrically-conductive housing encases the potting material and forms exterior packaging of the device. During manufacturing, the electrically-conductive structure, the die, and at least part of the lead may be arranged within the electrically-conductive housing either before or after the potting material is disposed in the housing. When the integrated circuit device is operating, heat is removable from the die via a thermal conduction path formed by the electrically-conductive structure, the potting material, and the electrically-conductive housing.
Public/Granted literature
- US20120252167A1 POTTED INTEGRATED CIRCUIT DEVICE WITH ALUMINUM CASE Public/Granted day:2012-10-04
Information query
IPC分类: