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US08426264B2 Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor 失效
薄膜半导体器件，横向双极薄膜晶体管，混合薄膜晶体管，MOS薄膜晶体管和制造薄膜晶体管的方法

  • Patent Title: Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor
  • Patent Title (中): 薄膜半导体器件，横向双极薄膜晶体管，混合薄膜晶体管，MOS薄膜晶体管和制造薄膜晶体管的方法
  • Application No.: US13149175
    Application Date: 2011-05-31
  • Publication No.: US08426264B2
    Publication Date: 2013-04-23
  • Inventor: Genshiro Kawachi
  • Applicant: Genshiro Kawachi
  • Applicant Address: JP Osaka
  • Assignee: Sharp Kabushiki Kaisha
  • Current Assignee: Sharp Kabushiki Kaisha
  • Current Assignee Address: JP Osaka
  • Priority: JP2006-175473 20060626
  • Main IPC: H01L21/8238
  • IPC: H01L21/8238 ;  H01L21/00
Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor
Abstract:
In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.
Abstract(Chinese):

在形成在形成于绝缘基板上的半导体薄膜中的发射极，基极和集电极的横向双极晶体管中，半导体薄膜是在规定方向结晶化的半导体薄膜。 此外，在形成在绝缘基板上形成的半导体薄膜中的MOS双极型混合型晶体管中，半导体薄膜是在预定方向结晶化的半导体薄膜。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8238 ........互补场效应晶体管，例如CMOS
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