Asymmetric transistor

Invention Grant

US08426279B2 Asymmetric transistor 有权

Title translation: 不对称晶体管

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Patent Title: Asymmetric transistor
Patent Title (中): 不对称晶体管
Application No.: US11512000

Application Date: 2006-08-29
Publication No.: US08426279B2

Publication Date: 2013-04-23
Inventor: Qiang Chen
Applicant: Qiang Chen
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES Inc.
Current Assignee: GLOBALFOUNDRIES Inc.
Current Assignee Address: KY Grand Cayman
Agency: Farjami & Farjami LLP
Main IPC: H01L21/8234
IPC: H01L21/8234

Abstract:

According to one exemplary embodiment, an asymmetric transistor includes a channel region having a drain-side channel portion and a source-side channel portion. The asymmetric transistor can be an asymmetric MOSFET. The source-side channel portion can comprise silicon, for example. The drain-side channel portion can comprise germanium, for example. The asymmetric transistor comprises a vertical heterojunction situated between the drain-side channel portion and the source-side channel portion. According to this exemplary embodiment, the bandgap of the source-side channel portion is higher than the bandgap of the drain-side channel portion and the carrier mobility of the drain-side channel portion is higher than the carrier mobility of the source-side channel portion. The transistor can further include a gate oxide layer situated over the drain-side channel portion and the source-side channel portion, and can also include a gate situated over the gate oxide layer.

Abstract(Chinese):

根据一个示例性实施例，非对称晶体管包括具有漏极侧沟道部分和源极侧沟道部分的沟道区域。非对称晶体管可以是非对称MOSFET。例如，源侧沟道部分可以包括硅。漏极侧通道部分可以包括例如锗。不对称晶体管包括位于漏极侧沟道部分和源极侧沟道部分之间的垂直异质结。根据该示例性实施例，源极侧沟道部分的带隙高于漏极侧沟道部分的带隙，并且漏极侧沟道部分的载流子迁移率高于源极侧沟道部分的载流子迁移率一部分。晶体管还可以包括位于漏极侧沟道部分和源极侧沟道部分之上的栅极氧化物层，并且还可以包括位于栅极氧化物层上方的栅极。

Public/Granted literature

US20080057635A1 Asymmetric transistor Public/Granted day:2008-03-06

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺