Invention Grant
- Patent Title: Wafer with spacer including horizontal member
- Patent Title (中): 具有间隔件的晶片，包括水平构件
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Application No.: US13232209Application Date: 2011-09-14
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Publication No.: US08426289B2Publication Date: 2013-04-23
- Inventor: Andrew B. Graham , Gary Yama , Gary O'Brien
- Applicant: Andrew B. Graham , Gary Yama , Gary O'Brien
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Maginot, Moore & Beck
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
In one embodiment, a method of forming an insulating spacer includes providing a base layer, providing an intermediate layer above an upper surface of the base layer, etching a first trench in the intermediate layer, depositing a first insulating material portion within the first trench, depositing a second insulating material portion above an upper surface of the intermediate layer, forming an upper layer above an upper surface of the second insulating material portion, etching a second trench in the upper layer, and depositing a third insulating material portion within the second trench and on the upper surface of the second insulating material portion.
Public/Granted literature
- US20120261789A1 Wafer with Spacer Including Horizontal Member Public/Granted day:2012-10-18
Information query
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