Invention Grant
- Patent Title: IC chip and its manufacturing method
- Patent Title (中): IC芯片及其制造方法
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Application No.: US11629861Application Date: 2005-07-06
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Publication No.: US08426293B2Publication Date: 2013-04-23
- Inventor: Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
- Applicant: Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-203906 20040709
- International Application: PCT/JP2005/012875 WO 20050706
- International Announcement: WO2006/006611 WO 20060119
- Main IPC: H01L21/301
- IPC: H01L21/301
Abstract:
It is an object of the present invention to decrease a unit cost of an IC chip and to achieve the mass-production of IC chips. According to the present invention, a substrate having no limitation in size, such as a glass substrate, is used instead of a silicon substrate. This achieves the mass-production and the decrease of the unit cost of the IC chip. Further, a thin IC chip is provided by grinding and polishing the substrate such as the glass substrate.
Public/Granted literature
- US20080265376A1 Ic Chip and Its Manufacturing Method Public/Granted day:2008-10-30
Information query
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