Invention Grant
- Patent Title: Manufacturing method of microcrystalline silicon film and manufacturing method of semiconductor device
- Patent Title (中): 微晶硅膜的制造方法和半导体器件的制造方法
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Application No.: US13267257Application Date: 2011-10-06
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Publication No.: US08426295B2Publication Date: 2013-04-23
- Inventor: Ryu Komatsu , Yasuhiro Jinbo , Hidekazu Miyairi , Yoshitaka Yamamoto
- Applicant: Ryu Komatsu , Yasuhiro Jinbo , Hidekazu Miyairi , Yoshitaka Yamamoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken JP Osaka-shi, Osaka
- Assignee: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken JP Osaka-shi, Osaka
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-235723 20101020
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.
Public/Granted literature
- US20120100675A1 MANUFACTURING METHOD OF MICROCRYSTALLINE SILICON FILM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2012-04-26
Information query
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