Invention Grant
- Patent Title: Manufacturing method of memory element, laser irradiation apparatus, and laser irradiation method
- Patent Title (中): 存储元件的制造方法，激光照射装置和激光照射方法
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Application No.: US13080812Application Date: 2011-04-06
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Publication No.: US08426324B2Publication Date: 2013-04-23
- Inventor: Koichiro Tanaka , Hirotada Oishi
- Applicant: Koichiro Tanaka , Hirotada Oishi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-026884 20060203
- Main IPC: H01L21/26
- IPC: H01L21/26
Abstract:
A method for manufacturing a memory element is proposed. A laser beam emitted from a laser oscillator is entered into a deflector, and a laser beam which has passed through the deflector is entered into a diffractive optical element to be diverged into a plurality of laser beams. Then, a photoresist formed over an insulating film is irradiated with the laser beam which is made to diverge into the plurality of laser beams, and the photoresist irradiated with the laser beam is developed so as to selectively etch the insulating film.
Public/Granted literature
- US20110183500A1 MANUFACTURING METHOD OF MEMORY ELEMENT, LASER IRRADIATION APPARATUS, AND LASER IRRADIATION METHOD Public/Granted day:2011-07-28
Information query
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