Invention Grant
US08426763B2 Rapid thermal processing systems and methods for treating microelectronic substrates 有权
用于处理微电子衬底的快速热处理系统和方法

  • Patent Title: Rapid thermal processing systems and methods for treating microelectronic substrates
  • Patent Title (中): 用于处理微电子衬底的快速热处理系统和方法
  • Application No.: US12429109
    Application Date: 2009-04-23
  • Publication No.: US08426763B2
    Publication Date: 2013-04-23
  • Inventor: Shu Qin
  • Applicant: Shu Qin
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Boise
  • Agency: Perkins Coie LLP
  • Main IPC: B23K10/00
  • IPC: B23K10/00
Rapid thermal processing systems and methods for treating microelectronic substrates
Abstract:
Rapid thermal processing systems and associated methods are disclosed herein. In one embodiment, a method for heating a microelectronic substrate include generating a plasma, applying the generated plasma to a surface of the microelectronic substrate, and raising a temperature of the microelectronic substrate with the generated plasma applied to the surface of the microelectronic substrate. The method further includes continuing to apply the generated plasma until the microelectronic substrate reaches a desired temperature.
Information query
Patent Agency Ranking
0/0