Invention Grant
- Patent Title: Resistive memory device and method of manufacturing the same
- Patent Title (中): 电阻式存储器件及其制造方法
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Application No.: US12073666Application Date: 2008-03-07
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Publication No.: US08426837B2Publication Date: 2013-04-23
- Inventor: Myoung-jae Lee , Young-soo Park , Jung-hyun Lee , Soon-won Hwang , Seok-jae Chung , Chang-soo Lee
- Applicant: Myoung-jae Lee , Young-soo Park , Jung-hyun Lee , Soon-won Hwang , Seok-jae Chung , Chang-soo Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0046200 20070511
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/06 ; H01L47/00
Abstract:
Provided is a resistive memory device and a method of manufacturing the resistive memory device that includes a bottom electrode, an insulating layer that is formed on the bottom electrode and has a hole that exposes the bottom electrode, a resistance layer and an intermediate layer which are formed in the hole, a switch structure formed on a surface of the intermediate layer, and an upper electrode formed on the switch structure.
Public/Granted literature
- US20080278989A1 Resistive memory device and method of manufacturing the same Public/Granted day:2008-11-13
Information query
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