Doped graphene electronic materials

Invention Grant

US08426842B2 Doped graphene electronic materials 有权

Patent Title: Doped graphene electronic materials
Application No.: US12800058

Application Date: 2010-05-07
Publication No.: US08426842B2

Publication Date: 2013-04-23
Inventor: Jeffrey A. Bowers , Roderick A. Hyde , Muriel Y. Ishikawa , Jordin T. Kare , Clarence T. Tegreene , Tatsushi Toyokuni , Richard N. Zare
Applicant: Jeffrey A. Bowers , Roderick A. Hyde , Muriel Y. Ishikawa , Jordin T. Kare , Clarence T. Tegreene , Tatsushi Toyokuni , Richard N. Zare
Applicant Address: US WA Bellevue
Assignee: The Invention Science Fund I, LLC
Current Assignee: The Invention Science Fund I, LLC
Current Assignee Address: US WA Bellevue
Main IPC: H01L29/06
IPC: H01L29/06 ; H01L21/20

Abstract:

A graphene substrate is doped with one or more functional groups to form an electronic device.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的