Invention Grant
- Patent Title: Long wavelength infrared superlattice
- Patent Title (中): 长波长红外超晶格
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Application No.: US13102863Application Date: 2011-05-06
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Publication No.: US08426845B2Publication Date: 2013-04-23
- Inventor: Yiqiao Chen , Peter Chow
- Applicant: Yiqiao Chen , Peter Chow
- Applicant Address: US MN EdenPrairie
- Assignee: SVT Associates, Inc.
- Current Assignee: SVT Associates, Inc.
- Current Assignee Address: US MN EdenPrairie
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.
Public/Granted literature
- US20110272672A1 Long Wavelength Infrared Superlattice Public/Granted day:2011-11-10
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