Invention Grant
US08426867B2 Thin film capacitor, and display device and memory cell employing the same, and manufacturing methods of them
有权
薄膜电容器以及采用该薄膜电容器的显示装置和存储单元及其制造方法
- Patent Title: Thin film capacitor, and display device and memory cell employing the same, and manufacturing methods of them
- Patent Title (中): 薄膜电容器以及采用该薄膜电容器的显示装置和存储单元及其制造方法
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Application No.: US12600499Application Date: 2008-07-02
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Publication No.: US08426867B2Publication Date: 2013-04-23
- Inventor: Hiroyuki Moriwaki
- Applicant: Hiroyuki Moriwaki
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2007-210339 20070810
- International Application: PCT/JP2008/061981 WO 20080702
- International Announcement: WO2009/022503 WO 20090219
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/94

Abstract:
A plurality of thin film capacitor parts are provided in respective regions each surrounded by a plurality of gate metal lines (12) and a plurality of data signal lines (11) intersecting perpendicularly to each other on a glass substrate (1), and each of the thin film capacitor parts has a lower electrode (3), a gate insulating film, and an upper electrode (5), which are provided in this order. Adjacent upper electrodes (5) are electrically connected to each other via a corresponding first wire (8), which is positioned above the adjacent upper electrodes (5) and intersects with one of the data signal lines (11). This makes it possible to provide a thin film capacitor, which includes the lower electrodes (3) each having the same thickness in a center portion and an edge portion, and the upper electrodes (5) that are connected to each other by using a corresponding connecting wire with low possibility of disconnection.
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