Invention Grant
- Patent Title: Light emitting diodes including two reflector layers
- Patent Title (中): 发光二极管包括两个反射层
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Application No.: US12360216Application Date: 2009-01-27
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Publication No.: US08426881B2Publication Date: 2013-04-23
- Inventor: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
- Applicant: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.
Public/Granted literature
- US20090166658A1 LIGHT EMITTING DIODES INCLUDING TWO REFLECTOR LAYERS Public/Granted day:2009-07-02
Information query
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