Invention Grant
- Patent Title: Sensing device
- Patent Title (中): 感应装置
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Application No.: US13122273Application Date: 2009-05-27
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Publication No.: US08426900B2Publication Date: 2013-04-23
- Inventor: Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , An Soon Kim , Tae Youb Kim , Gun Yong Sung
- Applicant: Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , An Soon Kim , Tae Youb Kim , Gun Yong Sung
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Nelson Mullins Riley & Scarborough LLP
- Agent EuiHoon Lee, Esq.
- Priority: KR10-2008-0098141 20081007
- International Application: PCT/KR2009/002796 WO 20090527
- International Announcement: WO2010/041805 WO 20100415
- Main IPC: G01N27/403
- IPC: G01N27/403

Abstract:
Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.
Public/Granted literature
- US20110180856A1 SENSING DEVICE Public/Granted day:2011-07-28
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