There are provided: a silicon pillar that is formed almost perpendicularly to a main surface of a substrate; first and second impurity diffused layers that are arranged in a lower part and an upper part of the silicon pillar, respectively; a gate electrode that is arranged horizontally through the silicon pillar; and a gate insulating film that is arranged between the gate electrode and the silicon pillar. The silicon pillar consequently has a small volume, which makes it possible to reduce the leak current of the transistor or thyristor formed in the silicon pillar.