Invention Grant
US08426907B2 Nonvolatile memory devices including multiple charge trapping layers
有权
包括多个电荷俘获层的非易失性存储器件
- Patent Title: Nonvolatile memory devices including multiple charge trapping layers
- Patent Title (中): 包括多个电荷俘获层的非易失性存储器件
-
Application No.: US12612453Application Date: 2009-11-04
-
Publication No.: US08426907B2Publication Date: 2013-04-23
- Inventor: Kwangmin Park , Juwan Lim , Seungjae Baik , Siyoung Choi , Kihyun Hwang , Juyul Lee
- Applicant: Kwangmin Park , Juwan Lim , Seungjae Baik , Siyoung Choi , Kihyun Hwang , Juyul Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2008-0114593 20081118
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A charge trap nonvolatile memory device includes a gate electrode on a substrate; a charge trapping layer between the substrate and the gate electrode; a charge tunneling layer between the charge trapping layer and the substrate; and a charge blocking layer between the gate electrode and the charge trapping layer. The charge trapping layer includes a first charge trapping layer having a first energy band gap and a second charge trapping layer having a second energy band gap that is different than the first energy band gap. The first and second charge trapping layers are repeatedly stacked and the first and second energy band gaps are smaller than energy band gaps of the charge tunneling layer and the charge blocking layer.
Public/Granted literature
- US20100123181A1 NONVOLATILE MEMORY DEVICES INCLUDING MULTIPLE CHARGE TRAPPING LAYERS Public/Granted day:2010-05-20
Information query
IPC分类:
