Invention Grant
- Patent Title: Architecture and method to determine leakage impedance and leakage voltage node
- Patent Title (中): 确定泄漏阻抗和漏电节点的结构和方法
-
Application No.: US12748117Application Date: 2010-03-26
-
Publication No.: US08427167B2Publication Date: 2013-04-23
- Inventor: Lawrence C. Streit
- Applicant: Lawrence C. Streit
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Kenyon & Kenyon LLP
- Main IPC: G01N27/416
- IPC: G01N27/416 ; G01R31/08 ; G01R31/02 ; H02H9/08
Abstract:
A circuit, system and method for detecting the presence of a leakage path in a multi-cell voltage source is described. The system includes a detection circuit, the detection circuit having a first amplifier and a second amplifier, a first input of the first amplifier connected to a first terminal of the voltage source and the first input of the second amplifier connected to a second terminal of the voltage source, a second input of each of the first and second amplifiers connected to a reference voltage point, and an output of each of the first and second amplifiers connected to a respective first and second output of the detection circuit; and a processor having inputs connected to the first and second outputs of the detection circuit.
Public/Granted literature
- US20100259276A1 ARCHITECTURE AND METHOD TO DETERMINE LEAKAGE IMPEDANCE AND LEAKAGE VOLTAGE NODE Public/Granted day:2010-10-14
Information query
