Invention Grant
- Patent Title: Test systems and methods for semiconductor devices
- Patent Title (中): 半导体器件的测试系统和方法
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Application No.: US12858597Application Date: 2010-08-18
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Publication No.: US08427189B2Publication Date: 2013-04-23
- Inventor: Wolfgang Marbler
- Applicant: Wolfgang Marbler
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
Test structures, systems, and methods for semiconductor devices are disclosed. In one embodiment, a test structure for a semiconductor device includes a winding disposed in at least one conductive material layer of the semiconductor device. At least a portion of the winding extends proximate a perimeter of the semiconductor device. The winding includes a first end and a second end. A first test pad is coupled to the first end of the winding, and a second test pad is coupled to the second end of the winding.
Public/Granted literature
- US20100308812A1 Test Systems and Methods for Semiconductor Devices Public/Granted day:2010-12-09
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