Invention Grant
- Patent Title: 3D semiconductor device
- Patent Title (中): 3D半导体器件
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Application No.: US12941073Application Date: 2010-11-07
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Publication No.: US08427200B2Publication Date: 2013-04-23
- Inventor: Zvi Or-Bach
- Applicant: Zvi Or-Bach
- Applicant Address: US CA San Jose
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US CA San Jose
- Agency: Tran & Associates
- Main IPC: H03K19/096
- IPC: H03K19/096
Abstract:
A semiconductor device includes a first mono-crystallized semiconductor layer; and a second mono-crystallized semiconductor layer; wherein said first and second mono-crystallized semiconductor layers are overlaying one on top of the other, and wherein said first mono-crystallized semiconductor layer comprise repeating memory structure with sub structures defined by etching.
Public/Granted literature
- US20120196409A1 3D SEMICONDUCTOR DEVICE Public/Granted day:2012-08-02
Information query
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