Invention Grant
- Patent Title: Gate driving circuit
- Patent Title (中): 门驱动电路
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Application No.: US12681515Application Date: 2008-09-03
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Publication No.: US08427225B2Publication Date: 2013-04-23
- Inventor: Hiroshi Nakatake , Masaru Fuku , Tatsuya Okuda , Yoshikazu Tsunoda
- Applicant: Hiroshi Nakatake , Masaru Fuku , Tatsuya Okuda , Yoshikazu Tsunoda
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-258568 20071002
- International Application: PCT/JP2008/065852 WO 20080903
- International Announcement: WO2009/044602 WO 20090409
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
To obtain a gate driving circuit in which rising of a constant current of a constant current circuit is fast and power saving is achieved, the gate driving circuit includes: a constant current driving circuit (28) for supplying a constant current; a gate terminal of a power semiconductor element (1), which is connected to an output terminal of the constant current driving circuit; a comparator (22) for comparing a voltage at the gate terminal with a predetermined voltage value and outputting a signal indicating that the voltage is higher than the predetermined voltage value; and a driving control section (20) for increasing a current from the constant current driving circuit in response to a signal for turning on the power semiconductor element, and reducing the current from the constant current driving circuit in response to the signal from the comparator.
Public/Granted literature
- US20100213989A1 GATE DRIVING CIRCUIT Public/Granted day:2010-08-26
Information query
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