Invention Grant
- Patent Title: Integrated circuits with bi-directional charge pumps
- Patent Title (中): 具有双向电荷泵的集成电路
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Application No.: US13038519Application Date: 2011-03-02
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Publication No.: US08427229B2Publication Date: 2013-04-23
- Inventor: Yvonne Lin , Tien-Chun Yang
- Applicant: Yvonne Lin , Tien-Chun Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
Integrated circuits such as memory arrays are coupled to a bi-directional charge pump that includes an input circuit and output circuit, and one or more pump stages coupled between the input circuit and the output circuit of the bi-directional charge pump. The output circuit includes a diode having an input and output and a transistor connected to the output of the diode and a ground potential. The input of the diode is electrically connected to the pump stages in a configuration that allows the charge pump to apply a positive or negative voltage to the memory array or other load.
Public/Granted literature
- US20120223766A1 INTEGRATED CIRCUITS WITH BI-DIRECTIONAL CHARGE PUMPS Public/Granted day:2012-09-06
Information query
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