Invention Grant
- Patent Title: High efficiency, high frequency amplifiers
- Patent Title (中): 高效率，高频放大器
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Application No.: US13068905Application Date: 2011-05-24
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Publication No.: US08427241B2Publication Date: 2013-04-23
- Inventor: Amin Ezzeddine , Ho C. Huang
- Applicant: Amin Ezzeddine , Ho C. Huang
- Applicant Address: US MD Gaithersburg
- Assignee: AMCOM Communications, Inc.
- Current Assignee: AMCOM Communications, Inc.
- Current Assignee Address: US MD Gaithersburg
- Agent Michael de Angeli
- Main IPC: H03F3/04
- IPC: H03F3/04
Abstract:
The invention is an improvement in microwave and millimeter wave amplifiers. Capacitors are connected in parallel with the source and drain terminals of all of the amplifying elements in a series of such elements except the first, compensating for current leakage due to gate capacitance. This results in improved synchronism of the amplifying elements, and improved overall efficiency and circuit performance.
Public/Granted literature
- US20120299658A1 High efficiency, high frequency amplifiers Public/Granted day:2012-11-29
Information query
