Invention Grant
- Patent Title: Resistor structure of phase change material and trimming method thereof
- Patent Title (中): 相变材料的电阻结构及其修整方法
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Application No.: US13414633Application Date: 2012-03-07
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Publication No.: US08427273B2Publication Date: 2013-04-23
- Inventor: Stefania Maria Serena Privitera
- Applicant: Stefania Maria Serena Privitera
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Graybeal Jackson LLP
- Priority: ITTO2008A0951 20081218
- Main IPC: H01C7/06
- IPC: H01C7/06
Abstract:
An embodiment of a resistor formed by at least one first portion and one second portion, electrically coupled to one another and with different crystalline phases. The first portion has a positive temperature coefficient, and the second portion has a negative temperature coefficient. The first portion has a first resistivity, and the second portion has a second resistivity, and the portions are coupled so that the resistor has an overall temperature coefficient that is approximately zero.
Public/Granted literature
- US20120171838A1 RESISTOR STRUCTURE OF PHASE CHANGE MATERIAL AND TRIMMING METHOD THEREOF Public/Granted day:2012-07-05
Information query
