Invention Grant
- Patent Title: Defect inspection method and apparatus
- Patent Title (中): 缺陷检查方法和装置
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Application No.: US12647246Application Date: 2009-12-24
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Publication No.: US08427634B2Publication Date: 2013-04-23
- Inventor: Yuta Urano , Akira Hamamatsu , Shunji Maeda , Kaoru Sakai
- Applicant: Yuta Urano , Akira Hamamatsu , Shunji Maeda , Kaoru Sakai
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-193549 20060714; JP2006-212744 20060804
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
A pattern inspection apparatus is provided to compare images of regions, corresponding to each other, of patterns that are formed so as to be identical and judge that non-coincident portions in the images are defects. The pattern inspection apparatus is equipped with an image comparing section which plots individual pixels of an inspection subject image in a feature space and detects excessively deviated points in the feature space as defects. Defects can be detected correctly even when the same patterns in images have a brightness difference due to a difference in the thickness of a film formed on a wafer.
Public/Granted literature
- US20100182602A1 DEFECT INSPECTION METHOD AND APPARATUS Public/Granted day:2010-07-22
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