Invention Grant
US08427795B2 Pad interface circuit and method of improving reliability of the pad interface circuit
有权
Pad接口电路和提高焊盘接口电路可靠性的方法
- Patent Title: Pad interface circuit and method of improving reliability of the pad interface circuit
- Patent Title (中): Pad接口电路和提高焊盘接口电路可靠性的方法
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Application No.: US12656223Application Date: 2010-01-21
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Publication No.: US08427795B2Publication Date: 2013-04-23
- Inventor: Chan-hee Jeon , Han-gu Kim , Min-sun Hong , Tae-hoon Ha , Doo-hyung Kim , Jung-soon Lee
- Applicant: Chan-hee Jeon , Han-gu Kim , Min-sun Hong , Tae-hoon Ha , Doo-hyung Kim , Jung-soon Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2009-0013128 20090217
- Main IPC: H02H9/04
- IPC: H02H9/04

Abstract:
The pad interface circuit includes a first stack MOS transistor having a first terminal connected to a pad and a bulk connected to a first supply voltage; a second stack MOS transistor having a first terminal connected to a second terminal of the first stack MOS transistor and a second terminal, a gate terminal, and a bulk that are connected to the first supply voltage; and a voltage level sensing circuit generating a feedback voltage by using a pad voltage applied from the pad. In addition, the feedback voltage is applied to a gate terminal of the first stack MOS transistor.
Public/Granted literature
- US20100208400A1 Pad interface circuit and method of improving reliability of the pad interface circuit Public/Granted day:2010-08-19
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