Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US13034012Application Date: 2011-02-24
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Publication No.: US08427798B2Publication Date: 2013-04-23
- Inventor: Hiroshi Shimomura , Masaru Numano
- Applicant: Hiroshi Shimomura , Masaru Numano
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2010-094615 20100416
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
In one embodiment, a semiconductor integrated circuit includes a power source circuit connected to a terminal of a first high potential side power source and outputs a voltage of a second high potential side power source, and an output transistor outputting an output signal to an output terminal. A cathode of a first diode is connected to the terminal of the first high potential side power source and an anode thereof is connected to the output terminal. A current source and a capacitor are connected between a terminal of the second high potential side power source and the terminal of a low potential side power source. A signal from a connection node of the current source and the capacitor and a control signal are inputted to a logic circuit, and the logic circuit outputs a signal obtained by a logic operation to the control terminal of the output transistor.
Public/Granted literature
- US20110255201A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2011-10-20
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