Invention Grant
US08427836B2 Power semiconductor module 有权
功率半导体模块

Power semiconductor module
Abstract:
A power semiconductor module in which a substrate is provided with at least one power semiconductor and has first and second contact areas, wherein a first load connection element with first contact elements provided thereon is supported on the first contact areas and a second load connection element with second contact elements provided thereon is supported on the second contact areas. Wherein at least one spring element is provided for producing a pressure contact between the contact elements and the contact areas. To reduce the structural size of the module, the pressure contact between the contact elements and the contact areas is exerted by at least one electrical component arranged between the spring element and one of the load connection elements.
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