Invention Grant
US08427869B2 Voltage switch circuit and nonvolatile memory device using the same
有权
电压开关电路和使用其的非易失性存储器件
- Patent Title: Voltage switch circuit and nonvolatile memory device using the same
- Patent Title (中): 电压开关电路和使用其的非易失性存储器件
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Application No.: US12982468Application Date: 2010-12-30
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Publication No.: US08427869B2Publication Date: 2013-04-23
- Inventor: Jae Ho Lee , Jin Su Park
- Applicant: Jae Ho Lee , Jin Su Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0066486 20100709
- Main IPC: G11C16/08
- IPC: G11C16/08 ; H03K17/687
Abstract:
A voltage switch circuit includes a positive voltage supply circuit configured to supply a positive voltage to a control node in response to an enable signal, a negative voltage supply circuit configured to supply a negative voltage to the control node in response to a negative voltage enable signal, a control signal generation circuit configured to generate the negative voltage enable signal in response to the enable signal, and a switch circuit configured to transfer an input voltage with a positive potential or a negative potential to an output node in response to a potential of the control node.
Public/Granted literature
- US20120008391A1 VOLTAGE SWITCH CIRCUIT AND NONVOLATILE MEMORY DEVICE USING THE SAME Public/Granted day:2012-01-12
Information query
