Invention Grant
US08427875B2 Method and memory controller for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory 有权
方法和存储器控制器,用于通过参考从闪速存储器读取的位序列的二进制数位分布特征来读取存储在闪速存储器中的数据

  • Patent Title: Method and memory controller for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory
  • Patent Title (中): 方法和存储器控制器,用于通过参考从闪速存储器读取的位序列的二进制数位分布特征来读取存储在闪速存储器中的数据
  • Application No.: US13044548
    Application Date: 2011-03-10
  • Publication No.: US08427875B2
    Publication Date: 2013-04-23
  • Inventor: Tsung-Chieh Yang
  • Applicant: Tsung-Chieh Yang
  • Applicant Address: TW Jhubei, Hsinchu County
  • Assignee: Silicon Motion Inc.
  • Current Assignee: Silicon Motion Inc.
  • Current Assignee Address: TW Jhubei, Hsinchu County
  • Agent Winston Hsu; Scott Margo
  • Main IPC: G11C16/26
  • IPC: G11C16/26
Method and memory controller for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory
Abstract:
An exemplary method for reading data stored in a flash memory includes: controlling the flash memory to perform a plurality of read operations upon each of a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from each of the memory cells as one of the bit sequences by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.
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