Invention Grant
- Patent Title: Semiconductor memory device and programming method thereof
- Patent Title (中): 半导体存储器件及其编程方法
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Application No.: US12748613Application Date: 2010-03-29
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Publication No.: US08427881B2Publication Date: 2013-04-23
- Inventor: Jae Hoon Jang , Jung Dal Choi
- Applicant: Jae Hoon Jang , Jung Dal Choi
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Stanzione & Kim, LLP
- Priority: KR2009-66933 20090722
- Main IPC: G11C11/4094
- IPC: G11C11/4094
Abstract:
A programming method of a semiconductor memory device includes charging a channel of an inhibit string to a precharge voltage provided to the common source line and boosting the charged channel by providing a wordline voltage to the cell strings. The inhibit string is connected to a program bitline among the bitlines.
Public/Granted literature
- US20110019486A1 SEMICONDUCTOR MEMORY DEVICE AND PROGRAMMING METHOD THEREOF Public/Granted day:2011-01-27
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