Invention Grant
US08427891B2 Hybrid volatile and non-volatile memory device with a shared interface circuit 有权
具有共享接口电路的混合易失性和非易失性存储器件

  • Patent Title: Hybrid volatile and non-volatile memory device with a shared interface circuit
  • Patent Title (中): 具有共享接口电路的混合易失性和非易失性存储器件
  • Application No.: US12596115
    Application Date: 2008-04-17
  • Publication No.: US08427891B2
    Publication Date: 2013-04-23
  • Inventor: Scott C. Best
  • Applicant: Scott C. Best
  • Applicant Address: US CA Sunnyvale
  • Assignee: Rambus Inc.
  • Current Assignee: Rambus Inc.
  • Current Assignee Address: US CA Sunnyvale
  • Agency: Mahamedi Paradice Kreisman LLP
  • Agent Lance M. Kreisman
  • International Application: PCT/US2008/060566 WO 20080417
  • International Announcement: WO2008/131058 WO 20081030
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Hybrid volatile and non-volatile memory device with a shared interface circuit
Abstract:
A composite, hybrid memory device including a first storage die having an array of volatile storage cells and a second storage die having an array of non-volatile storage cells disposed within an integrated circuit package. The hybrid memory device includes a shared interface circuit to receive memory access commands directed to the first storage die and the second storage die and to convey read and write data between an external data path and the first and second storage dice.
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