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US08428093B2 High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation 有权
具有主动 - 光子晶体结构的大功率量子级联激光器,用于单相,同相模式操作

High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation
Abstract:
Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a non-uniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions.
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